Good news!
"Scientists have found a way to improve the efficiency of spintronic devices which are a key foundation of next-generation computing such as ultra-low-power memory and neuromorphic chips.
The newly-discovered physical phenomenon allows magnetic materials to spontaneously change the direction of their internal magnetisation by harnessing the loss of electron ‘spin’ as a natural source of energy. ...
In the new method, current flows directly into the magnetic material instead. This causes spin to escape in one direction only, which acts on the magnetic material causing it to switch its magnetic orientation. ..."
"... A team of researchers has identified a new physical phenomenon that allows magnetic materials to spontaneously switch their internal magnetization direction without external stimuli. Magnetic materials are key to the next generation of information processing devices that store information or perform computations by changing the direction of their internal magnetization. For example, if the magnetization direction is upward, it is recognized as '1', and if it is downward, it is recognized as '0', and data can be stored or computed. ..."
From the abstract:
"Efficient control of magnetization in ferromagnets is crucial for high-performance spintronic devices. Magnons offer a promising route to achieve this objective with reduced Joule heating and minimized power consumption. While most research focuses on optimizing magnon transport with minimal dissipation, we present an unconventional approach that exploits magnon dissipation for magnetization control, rather than mitigating it.
By combining a single ferromagnetic metal with an antiferromagnetic insulator that breaks symmetry in spin transport across the layers while preserving the symmetry in charge transport, we realize considerable spin-orbit torques comparable to those found in non-magnetic metals, enough for magnetization switching.
Our systematic experiments and comprehensive analysis confirm that our findings are a result of magnonic spin dissipation, rather than external spin sources. These results provide insights into the experimentally challenging field of intrinsic spin currents in ferromagnets, and open up possibilities for developing energy-efficient devices based on magnon dissipation."
"Turning spin loss into energy", developing a key technology for ultra-low power next-generation information devices "Natural loss of 'spin' harnessed as a source of energy, a new principle developed"
Fig. 1: SAM transfer in HM/FM/Insulator and AFI/FM metal/Insulator. (Left, a conventional spintronic device structure. Right, the new method proposed in the study.)
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