Amazing stuff!
"... a design strategy for making individual-electron states easier to discern at room temperature ..."
From the editor's summary and abstract:
"Editor’s summary
Realizing stable and distinguishable quantum memory at the single-electron level has long been challenged by increased parasitic gate-channel fringe capacitance, which substantially lowers the threshold voltage shift (ΔVth) caused by stored electrons as device dimensions are scaled down.
Using atomically thin two-dimensional materials and edge-contacted metal electrodes, Liu et al. designed a coplanar drain channel source structure that enabled a nonvolatile ΔVth of 0.5 volts at room temperature. Their work demonstrates the ability to control single-electron quantum behavior, offering promising prospects for nanoscale memory device engineering. ...
Abstract
The ultimate goal of information storage is single-electron memory.
Quantum mechanics predicts that two distinguishable quantum states can be realized by confining a single electron within an ultrasmall space.
However, scaling down such devices paradoxically amplifies fringe capacitance effects, which hinders the experimental observation of single-electron memory.
We report a two-dimensional single-electron memory device based on a coplanar drain-channel-source structure that suppressed fringe capacitance, exhibiting a nonvolatile threshold voltage shift of 0.5 volts after the change of a single electron.
Two intriguing quantum behaviors have also been verified regarding the programming voltage.
Additionally, we have predicted and observed a distinctive quantum memory effect: A quantum state is cut off by density of states scissors."
Robust single-electron memory with quantum states manipulation (no public access)
Room-temperature 2D single-electron memory device
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