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"... Now, researchers have developed layered material that can reduce the energy consumed by memory devices by a factor of 10 by doing away with the need for power-hungry external magnetic fields.
The alloy is made from the magnetic elements cobalt and iron, and nonmagnetic elements germanium and tellurium. It allows 2 opposing magnetic forces to coexist in the same thin material.
Until now, this has only been possible by stacking different ‘ferromagnetic’ and ‘antiferromagnetic’ materials in multilayer structures. ..."
"... To store information, memory devices must switch the direction of electrons within a material. With conventional materials, this typically requires an external magnetic field to alternate the electron orientation. ... new material, however, features a built-in combination of opposing magnetic forces that create an internal force and tilted overall magnetic alignment.
“This tilt allows electrons to switch direction rapidly and easily without the need for any external magnetic fields. By eliminating the need for power-hungry external magnetic fields, power consumption can be reduced by a factor of ten,” ..."
From the abstract:
"The discovery of van der Waals (vdW) magnetic materials exhibiting non-trivial and tunable magnetic interactions can lead to exotic magnetic states that are not readily attainable with conventional materials.
Such vdW magnets can provide a unique platform for studying new magnetic phenomena and realizing magnetization dynamics for energy-efficient and non-volatile spintronic memory and computing technologies.
Here, the coexistence of ferromagnetic and antiferromagnetic orders in vdW magnet (Co0.5Fe0.5)5-xGeTe2 (CFGT) above room temperature, inducing an intrinsic exchange bias and canted perpendicular magnetism is discovered.
Such non-trivial intrinsic magnetic order enables to realize energy-efficient, magnetic field-free, and deterministic spin-orbit torque (SOT) switching of CFGT in heterostructure with Pt.
These experiments, in conjunction with density functional theory and Monte Carlo simulations, demonstrate the coexistence of non-trivial magnetic orders in CFGT, which enables field-free SOT magnetization dynamics in spintronic devices."
Material breakthrough paves way for major energy savings in memory chips (original news release) "It is anticipated that, within just a few decades, the surging volume of digital data will constitute one of the world’s largest energy consumers. Now, researchers ... have made a breakthrough that could shift the paradigm: an atomically thin material that enables two opposing magnetic forces to coexist – dramatically reducing energy consumption in memory devices by a factor of ten. This discovery could pave the way for a new generation of ultra-efficient, reliable memory solutions for AI, mobile technology and advanced data processing."
Figure 1
Coexistence of ferro- and antiferro-magnetic orders in a single atomic stacking nanolayers of (Co0.5Fe0.5)5-xGeTe2.
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