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"... Enter 2D materials — delicate, two-dimensional sheets of perfect crystals that are as thin as a single atom. At the scale of nanometers, 2D materials can conduct electrons far more efficiently than silicon. The search for next-generation transistor materials therefore has focused on 2D materials as potential successors to silicon. ...
The team has developed a method that could enable chip manufacturers to fabricate ever-smaller transistors from 2D materials by growing them on existing wafers of silicon and other materials. The new method is a form of “nonepitaxial, single-crystalline growth,” which the team used for the first time to grow pure, defect-free 2D materials onto industrial silicon wafers. ...
With their method, the team fabricated a simple functional transistor from a type of 2D materials called transition-metal dichalcogenides, or TMDs, which are known to conduct electricity better than silicon at nanometer scales. ...
the researchers use conventional vapor deposition methods to pump atoms across a silicon wafer. The atoms eventually settle on the wafer and nucleate, growing into two-dimensional crystal orientations. If left alone, each “nucleus,” or seed of a crystal, would grow in random orientations across the silicon wafer. ... found a way to align each growing crystal to create single-crystalline regions across the entire wafer. ...
The team has developed a method that could enable chip manufacturers to fabricate ever-smaller transistors from 2D materials by growing them on existing wafers of silicon and other materials. The new method is a form of “nonepitaxial, single-crystalline growth,” which the team used for the first time to grow pure, defect-free 2D materials onto industrial silicon wafers. ...
With their method, the team fabricated a simple functional transistor from a type of 2D materials called transition-metal dichalcogenides, or TMDs, which are known to conduct electricity better than silicon at nanometer scales. ...
the researchers use conventional vapor deposition methods to pump atoms across a silicon wafer. The atoms eventually settle on the wafer and nucleate, growing into two-dimensional crystal orientations. If left alone, each “nucleus,” or seed of a crystal, would grow in random orientations across the silicon wafer. ... found a way to align each growing crystal to create single-crystalline regions across the entire wafer. ...
To do so, they first covered a silicon wafer in a “mask” — a coating of silicon dioxide that they patterned into tiny pockets, each designed to trap a crystal seed. Across the masked wafer, they then flowed a gas of atoms that settled into each pocket to form a 2D material — in this case, a TMD. The mask’s pockets corralled the atoms and encouraged them to assemble on the silicon wafer in the same, single-crystalline orientation. ... “You have single-crystalline growth everywhere, even if there is no epitaxial relation between the 2D material and silicon wafer.”
With their masking method, the team fabricated a simple TMD transistor and showed that its electrical performance was just as good as a pure flake of the same material.
They also applied the method to engineer a multilayered device. After covering a silicon wafer with a patterned mask, they grew one type of 2D material to fill half of each square, then grew a second type of 2D material over the first layer to fill the rest of the squares. The result was an ultrathin, single-crystalline bilayer structure within each square. ..."
Non-epitaxial single-crystal 2D material growth by geometric confinement (no public access)
By depositing atoms on a wafer coated in a “mask” (top left), ... can corral the atoms in the mask’s individual pockets (center middle), and encourage the atoms to grow into perfect, 2D, single-crystalline layers (bottom right).
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