Physicists find a novel way to switch antiferromagnetism on and off

Recommendable! Could this be a breakthrough in memory technology? However, I sense a discrepancy between the MIT News article's description of the research and the abstract of the actual underlying research article.

"... Now MIT physicists have shown preliminary evidence that data might be stored as faster, denser, and more secure bits made from antiferromagnets.

Antiferromagnetic, or AFM materials are the lesser-known cousins to ferromagnets, or conventional magnetic materials. ...
The absence of net magnetization in an antiferromagnet makes it impervious to any external magnetic field. If they were made into memory devices, antiferromagnetic bits could protect any encoded data from being magnetically erased. They could also be made into smaller transistors and packed in greater numbers per chip than traditional silicon. ..."

Physicists find a novel way to switch antiferromagnetism on and off | MIT News | Massachusetts Institute of Technology The findings could lead to faster, more secure memory storage, in the form of antiferromagnetic bits.

I presume, this is the link to underlying research article as the MIT News article omitted to provide the link:

Sudden Collapse of Magnetic Order in Oxygen-Deficient Nickelate Films